Photoresist in a sentence

DNQ-Novolac photoresist One very common positive photoresist used with the I, G and H-lines from a mercury-vapor lamp is based on a mixture of diazonaphthoquinone (DNQ) and novolac resin (a phenol formaldehyde resin ).

Photons with energies exceeding the ionization potential of the photoresist (can be as low as 5 eV in condensed solutions) citation can also release electrons which are capable of additional exposure of the photoresist.

Photoresist removal After a photoresist is no longer needed, it must be removed from the substrate.

Positive photoresist, the most common type, becomes soluble in the developer when exposed; with negative photoresist, unexposed regions are soluble in the developer.

This water repellent layer prevents the aqueous developer from penetrating between the photoresist layer and the wafer's surface, thus preventing so-called lifting of small photoresist structures in the (developing) pattern.

This achievement is complemented by the strong participation of photoresist, equipment and industrial chemical manufacturer investors as well,” added Andrew Grenville, CEO of Inpria.

After removal of unwanted photoresist, a pattern determined by the mask remains on the sample.

A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal.

A viscous, liquid solution of photoresist is dispensed onto the wafer, and the wafer is spun rapidly to produce a uniformly thick layer.

Etching :main In etching, a liquid ("wet") or plasma ("dry") chemical agent removes the uppermost layer of the substrate in the areas that are not protected by photoresist.

For example, thin film metrology based on ellipsometry or reflectometry is used to tightly control the thickness of gate oxide, as well as the thickness, refractive index and extinction coefficient of photoresist and other coatings.

Hence, except for projection lithography (see below), contact printing offers the best resolution, because its gap distance is approximately zero (neglecting the thickness of the photoresist itself).

In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer.

It uses light to transfer a geometric pattern from a photomask to a light-sensitive chemical " photoresist ", or simply "resist," on the substrate.

It uses X-rays to transfer a geometric pattern from a mask to a light-sensitive chemical photoresist, or simply "resist," on the substrate.

Negative photoresist Contrary to past types, current negative photoresists tend to exhibit better adhesion to various substrates such as Si, GaAs, InP and glass, as well as metals, including Au, Cu and Al, compared to positive-tone photoresists.

Steps may then be taken to "etch" away, deposit on or otherwise modify areas of the sample where no photoresist remains.

The depth of focus restricts the thickness of the photoresist and the depth of the topography on the wafer.

The light causes chemical reactions to occur in the photoresist.

The part of the silicon that was not covered by the photoresist layer from the previous step can now be etched.